Electron energy-loss near-edge structure - a tool for the investigation of electronic structure on the nanometre scale

被引:147
作者
Keast, VJ
Scott, AJ
Brydson, R
Williams, DB
Bruley, J
机构
[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England
[2] Univ Leeds, Sch Proc Environm & Mat Engn, Leeds LS2 93T, W Yorkshire, England
[3] Lehigh Univ, Dept Mat Sci & Engn, Bethlehem, PA 18015 USA
[4] IBM Corp, Analyt Serv, Hopewell Jct, NY 12533 USA
关键词
density of states; EELS; electron energy loss; electronic structure; ELNES; spectroscopy;
D O I
10.1046/j.1365-2818.2001.00898.x
中图分类号
TH742 [显微镜];
学科分类号
摘要
Electron energy-loss near-edge structure (ELNES) is a technique that can be used to measure the electronic structure (i.e. bonding) in materials with subnanometre spatial resolution. This review covers the theoretical principles behind the technique, the experimental procedures necessary to acquire good ELNES spectra, including potential artefacts, and gives examples relevant to materials science.
引用
收藏
页码:135 / 175
页数:41
相关论文
共 174 条
[1]  
Ahn C.C., 1983, EELS ATLAS
[2]  
ANDERSON IM, 1997, INTERFACIAL ENG OPTI, P61
[3]   Real-space multiple-scattering calculation and interpretation of x-ray-absorption near-edge structure [J].
Ankudinov, AL ;
Ravel, B ;
Rehr, JJ ;
Conradson, SD .
PHYSICAL REVIEW B, 1998, 58 (12) :7565-7576
[4]  
ASCHROFT NW, 1976, SOLID STATE PHYSICS
[5]  
Atkins PW., 1991, QUANTA HDB CONCEPTS
[6]   DIPOLE-FORBIDDEN EXCITATIONS IN ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].
AUERHAMMER, JM ;
REZ, P .
PHYSICAL REVIEW B, 1989, 40 (04) :2024-2030
[7]   CARBON-1S NEAR-EDGE-ABSORPTION FINE-STRUCTURE IN GRAPHITE [J].
BATSON, PE .
PHYSICAL REVIEW B, 1993, 48 (04) :2608-2610
[8]   ELECTRON-ENERGY-LOSS SPECTROSCOPY OF SINGLE SILICON NANOCRYSTALS - THE CONDUCTION-BAND [J].
BATSON, PE ;
HEATH, JR .
PHYSICAL REVIEW LETTERS, 1993, 71 (06) :911-914
[9]   CONDUCTION BAND-STRUCTURE IN STRAINED SILICON BY SPATIALLY-RESOLVED ELECTRON-ENERGY-LOSS SPECTROSCOPY [J].
BATSON, PE .
ULTRAMICROSCOPY, 1995, 59 (1-4) :63-70
[10]   Near-atomic-resolution EELS in silicon-germanium alloys [J].
Batson, PE .
JOURNAL OF MICROSCOPY, 1995, 180 :204-210