Investigation on Ag/Pb(Zr0.53Ti0.47)O3/YBa2Cu3O7-δ three-terminal system with small gate area

The three-terminal devices Ag/Pb(ZrxTi1-x)O-3/YBa2Cu3O7-delta(Ag/PZT/YBCO) have been fabricated onto (100) SrTiO3 by pulsed laser deposition technique and photolithography. For the purpose of application, we specially selected the PZT layer with morphotropic phase boundary composition as the gate to lower the coercive fields and decrease the operating voltage. We tried to minimize the electrode area to 6 X 10(-6) cm(2) for deeply investigating the leakage problem and getting sufficient polarization of the PZT gate, also for the high integration in future application. From the process, we obtained the following results at 64 K: the saturation polarization and the remanent polarization reach 60 and 41 mu C/cm(2), respectively. The coercive field is lower than 37 kV/cm, and the breakdown field is greater than or equal to 3 X 10(5) V/cm. The electric field effect measurement shows that the maximum modulation channel resistance Delta R-DS/R-DS is 3% under the gate voltage of +/-9 V at 64 K (lower than the zero resistance temperature T-C0, 70 K), at which the superconducting and normal state transition is driven by channel current I-DS(I-DS>I-c, I-c = 15 mA). (C) 1999 American Institute of Physics. [S0003-6951(99)00114-X].