High breakdown voltage GaNHFET with field plate

被引：34

作者：

Li, J ^{[1
]}

Cai, SJ ^{[1
]}

Pan, GZ ^{[1
]}

Chen, YL ^{[1
]}

Wen, CP ^{[1
]}

Wang, KL ^{[1
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90095 USA

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 03期

关键词：

D O I：

10.1049/el:20010091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2 x 10(6)V/cm to 0.9 x 10(6)V/cm for the particular structure used. A high breakdown voltage (over 110V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET.

引用

页码：196 / 197

页数：2

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