InN polarity determination by convergent-beam electron diffraction

被引：25

作者：

Mitate, T

Mizuno, S

Takahata, H

Kakegawa, R

Matsuoka, T

Kuwano, N

机构：

[1] NTT Adv Technol Corp, Kanagawa 2430124, Japan

[2] NTT Basic Res Labs, Kanagawa 2430198, Japan

[3] Kyushu Univ, KASTEC, Fukuoka 8168580, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 13期

关键词：

D O I：

10.1063/1.1885174

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To establish an accurate determination technique for the polarity of InN by convergent-beam electron diffraction (CBED), we clarified the influence of the electron incidence direction, film thickness, and the temperature factor B on CBED patterns by simulation. The electron incidence direction of [1(1) over bar 00] and a film thinner than 50 nm were found to be preferable for easy and reliable polarity determination. Using an InN film grown on a (000(1) over bar) GaN template on (0001) sapphire by metalorganic vapor-phase epitaxy, observation of the CBED pattern in the thin region of the film was confirmed from the simulation result. This InN film was clearly determined to have N polarity and the value of B was estimated to be less than 2.0 angstrom(2). (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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