Structure and Debye temperature of wurtzite GaN

被引：45

作者：

Chen, XL

Liang, JK

Xu, YP

Xu, T

Jiang, PZ

Yu, YD

Lu, KQ

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Acad Sinica, Int Ctr Mat Phys, Shenyang 110015, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 1999年 / 13卷 / 9-10期

关键词：

D O I：

10.1142/S0217984999000385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High Pure Wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder X-ray diffraction using the Rietveld technique. The positions in the unit cell for Ga and N were refined to be (0, 0, 0) and (0, 0, 0.3814). The Debye temperature was determined as 586 K from the refined temperature factor by using the Debye approximation.

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页码：285 / 290

页数：6

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