Structure and heat capacity of wurtzite GaN from 113 to 1073 K

被引：48

作者：

Chen, XL

Lan, YC

Liang, JK

Cheng, XR

Cu, YP

Xu, T

Jiang, PZ

Lu, KQ

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110015, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 1999年 / 16卷 / 02期

关键词：

D O I：

10.1088/0256-307X/16/2/011

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

High pure wurtzite structure GaN has been synthesized by gas reaction method. Its structure was determined by powder x-ray diffraction using the Rietveld technique. The heat capacity C-p was measured from 113 to 1073 K, which can be represented by C-p = 0.362 + 3.010 x 10(-4)T - 3.411 x 10(3)T(-2) - 7.791 x 10(-8)T(2). NO measurable phase transition was observed in this temperature range.

引用

页码：107 / 108

页数：2

共 17 条

[1] Synthesis routes and characterization of high-purity, single-phase gallium nitride powders
Balkas, CM
Davis, RF
[J]. JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1996, 79 (09) : 2309 - 2312
[2] STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE
DINGLE, R
SHAKLEE, KL
LEHENY, RF
ZETTERSTROM, RB
[J]. APPLIED PHYSICS LETTERS, 1971, 19 (01) : 5 - +
[3] BAND-STRUCTURE AND HIGH-PRESSURE PHASE-TRANSITION IN GAN
GORCZYCA, I
CHRISTENSEN, NE
[J]. SOLID STATE COMMUNICATIONS, 1991, 80 (05) : 335 - 338
[4] III-V NITRIDES - THERMODYNAMICS AND CRYSTAL-GROWTH AT HIGH N-2 PRESSURE
GRZEGORY, I
JUN, J
BOCKOWSKI, M
KRUKOWSKI, S
WROBLEWSKI, M
LUCZNIK, B
POROWSKI, S
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1995, 56 (3-4) : 639 - 647
[5] HIGH DISLOCATION DENSITIES IN HIGH-EFFICIENCY GAN-BASED LIGHT-EMITTING-DIODES
LESTER, SD
PONCE, FA
CRAFORD, MG
STEIGERWALD, DA
[J]. APPLIED PHYSICS LETTERS, 1995, 66 (10) : 1249 - 1251
[6] THERMAL-EXPANSION OF GALLIUM NITRIDE
LESZCZYNSKI, M
SUSKI, T
TEISSEYRE, H
PERLIN, P
GRZEGORY, I
JUN, J
POROWSKI, S
MOUSTAKAS, TD
[J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (08) : 4909 - 4911
[7] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN
MARUSKA, HP
TIETJEN, JJ
[J]. APPLIED PHYSICS LETTERS, 1969, 15 (10) : 327 - &
[8] 1ST-PRINCIPLES TOTAL-ENERGY CALCULATION OF GALLIUM NITRIDE
MIN, BJ
CHAN, CT
HO, KM
[J]. PHYSICAL REVIEW B, 1992, 45 (03): : 1159 - 1162
[9] MUNOZ A, 1991, PHYS REV B, V44, P10372, DOI 10.1103/PhysRevB.44.10372
[10] Nakamura S, 1998, PHYS WORLD, V11, P31

← 1 2 →