Graphene nano-ribbon electronics

被引：1286

作者：

Chen, Zhihong ^{[1
]}

Lin, Yu-Ming ^{[1
]}

Rooks, Michael J. ^{[1
]}

Avouris, Phaedon ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 40卷 / 02期

关键词：

graphene; FET; semiconducting; edge states;

D O I：

10.1016/j.physe.2007.06.020

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have fabricated graphene nano-ribbon field-effect transistor devices and investigated their electrical properties as a function of ribbon width. Our experiments show that the resistivity of a ribbon increases as its width decreases, indicating the impact of edge states. Analysis of temperature-dependent measurements suggests a finite quantum confinement gap opening in narrow ribbons. The electrical current noise of the graphene ribbon devices at low frequency is found to be dominated by the 1/f noise. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：228 / 232

页数：5

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