Gain saturation in traveling-wave semiconductor optical amplifiers

被引：4

作者：

Kim, I ^{[1
]}

Uppal, K

Dapkus, PD

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Natl Ctr Integrated Photon Technol, Los Angeles, CA 90089 USA

[2] Spectra Diode Labs, San Jose, CA 95134 USA

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 10期

关键词：

integrated optoelectronics; optical waveguides; quantum-well lasers; semiconductor optical amplifiers;

D O I：

10.1109/3.720231

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The gain saturation behavior of semiconductor traveling-wave optical amplifiers has been analyzed using a model that includes the specific dependence of gain on carrier concentration. Under the condition of a specific gain at a particular current, it is found that the saturation power strongly depends on the choice between quantum well (QW) or bulk amplifying medium but weakly on the detailed design of the device such as the number of QW's or the thickness of the hulk layer, The higher saturation power of the QW-based amplifier is caused by its logarithmic gain-current relation rather than its low optical confinement factor. Also, when the unsaturated device gain is specified, the designed saturation power can be obtained with the lowest drive current by using the highest optical confinement.

引用

页码：1949 / 1952

页数：4

共 11 条

[1]

AGRAWAL GP, 1993, SEMICONDUCTOR LASERS, P519

[2]

AGRAWAL GP, 1995, SEMICONDUCTOR LASERS, P244

[3] EFFICIENT BAND-STRUCTURE CALCULATIONS OF STRAINED QUANTUM-WELLS [J].