The effect of Zn buffer layer on growth and luminescence of ZnO films deposited on Si substrates

被引：146

作者：

Fu, ZX ^{[1
]}

Lin, BX

Liao, GH

Wu, ZQ

机构：

[1] Univ Sci & Technol China, Struct Res Lab, Hefei 230026, Peoples R China

[2] Chinese Acad Sci, Hefei 230026, Peoples R China

[3] Univ Sci & Technol China, Dept Phys, Hefei 230026, Peoples R China

[4] Univ Sci & Technol China, Ctr Fundamental Phys, Hefei 230026, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 193卷 / 03期

关键词：

ZnO films on Si; Zn buffer layer; luminescence;

D O I：

10.1016/S0022-0248(98)00511-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The highly c-axis oriented ZnO films were deposited on Si substrates with Zn buffer layers. The intense cathodoluminescence. including UV, blue, and green emissions, was observed in these films at room temperature. According to X-ray diffraction analysis and cathodoluminescence spectra, it is found that the Zn buffer layer plays an important role for improving crystal quality of films and for getting intense cathodoluminescence. (C) 1998 Elsevier Science B.V. AU rights reserved.

引用

页码：316 / 321

页数：6