An antiresonant Fabry-Perot saturable absorber for passive mode-locking fabricated by metal-organic vapor phase epitaxy and ion implantation design, characterization, and mode-locking

被引：15

作者：

Lederer, MJ ^{[1
]}

Luther-Davies, B

Tan, HH

Jagadish, C

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Laser Phys Ctr, Canberra, ACT 0200, Australia

[2] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1998年 / 34卷 / 11期

关键词：

ion implantation; mode-locked lasers; MOVPE growth; passive mode-locking; semiconductor saturable absorbers;

D O I：

10.1109/3.726608

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated GaAs-based antiresonant Fabry-Perot saturable absorbers (A-FPSA's) for passive mode-locking near infrared solid-state lasers using metal-organic vapor phase epitaxy (MOVPE) growth followed by ion implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing, The devices mere characterized for their large-signal response including saturation fluence, modulation depth, and nonbleachable losses-important parameters for passive mode-locking. Finally, we demonstrate mode-locking using our samples within a Ti:sapphire laser observing stable and reliable self-starting, pulses in the 100-fs range, and 50-nm tunability, Results of computer simulations are in good agreement with the experiments.

引用

页码：2150 / 2161

页数：12

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