Application of GaN-based heterojunction FETs for advanced wireless communication

被引：114

作者：

Ohno, Y ^{[1
]}

Kuzuhara, M ^{[1
]}

机构：

[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Photon & Wireless Devices Res Labs, Tsukuba, Ibaraki 3058501, Japan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2001年 / 48卷 / 03期

关键词：

gallium nitride; HFET; high power; high voltage; Maxwell-Boltzmann distribution; sapphire substrate; silicon carbide substrate; wide bandgap;

D O I：

10.1109/16.906445

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We review the features of GaN-based FETs and describe their expected development direction. GaN has a high breakdown field, but this does not necessarily mean it is suitable for high-voltage and high-power applications. The main advantage is that it enables scaling down beyond the silicon MOSFET miniaturization limitation from the Maxwell-Boltzmann distribution. Thus, fine gate patterns together with a high carrier velocity make GaN-based FETs be suited for millimeter and near millimeter wave length high-power applications. In addition, by using large-area sapphire substrates, high-performance and low-cost MMICs can be produced on GaN, We expect that such devices will be the key to future advanced wireless communication systems.

引用

页码：517 / 523

页数：7

共 17 条

[1] Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures [J].