Nitrogen-hydrogen plasma processing of thin vanadium films

被引：3

作者：

Chaplanov, AM ^{[1
]}

Shcherbakova, EN ^{[1
]}

机构：

[1] Belarussian Acad Sci, Inst Elect, Minsk 220090, BELARUS

来源：

INORGANIC MATERIALS | 2001年 / 37卷 / 03期

关键词：

Hydrogen; Nitrogen; Microscopy; Electron Microscopy; Inorganic Chemistry;

D O I：

10.1023/A:1004157128875

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The chemical and microstructural processes induced in vanadium films by nitrogen-hydrogen plasma processing were characterized by x-ray diffraction, electron microscopy, and resistivity measurements, Conditions were identified under which vanadium nitride layers can be produced by plasma processing.

引用

页码：233 / 236

页数：4

共 10 条

[1]

ARTSIMOVICH LA, 1969, ELEMENTARYNAYA FIZIK

[2]

Arzamasov B.N., 1979, KHIMIKO TERMICHESKAY

[3]

Belyi I. M., 1981, Fizika i Khimiya Obrabotki Materialov, P12

[4]

CHAPLANOV AM, 1993, IAN SSSR NEORG MATER, V29, P1477

[5]

DANILOV BS, 1987, ITOGI NAUKI TEKH E, V19, P121

[6]

KATAEV YG, 1969, IZV VUZ FIZ+, P20

[7]

Kiparisov S.S., 1972, AZOTIROVANIE TUGOPLA

[8]

TILL WC, 1982, INTEGRATED CIRCUITS

[9] PROPERTIES AND MICROELECTRONIC APPLICATIONS OF THIN-FILMS OF REFRACTORY-METAL NITRIDES [J].

WITTMER, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (04) :1797-1803

[10]

1979, PHASE TRANSFORMATION

← 1 →