Photo-induced phenomena in sputtered GeO2 films

被引：29

作者：

Terakado, N ^{[1
]}

Tanaka, K ^{[1
]}

机构：

[1] Hokkaido Univ, Grad Sch Engn, Dept Appl Phys, Sapporo, Hokkaido 0608628, Japan

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 2005年 / 351卷 / 01期

关键词：

D O I：

10.1016/j.jnoncrysol.2004.10.002

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Macroscopic and microscopic changes in sputtered GeO2 films induced by band-gap light from an ArF excimer laser have been studied. When irradiated at 1 atm, the film thickness increases, surface-roughness increases, refractive-index decreases, hygroscopic enhancements, and Ge-O-Ge distance increases. Irradiations in vacuum make these changes smaller or undetectable. These photoinduced changes are discussed from phenomenological and structural viewpoints, and compared with characteristics in GeO2-SiO2 and GeS2 films. (C) 2004 Elsevier B.V. All rights reserved.

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页码：54 / 60

页数：7

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