Room temperature operated single electron transistor made by STM/AFM nano-oxidation process

被引：20

作者：

Matsumoto, K

机构：

[1] Electrotechnical Laboratory MITI, 1-1-4 Umezono

来源：

PHYSICA B | 1996年 / 227卷 / 1-4期

关键词：

SET; STM; AFM;

D O I：

10.1016/0921-4526(96)00359-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 [凝聚态物理];

摘要：

The experimental results of the single electron transistor (SET) operated at room temperature, which was fabricated by a scanning tunneling microscope (STM)/an atomic force microscope (AFM) nano-oxidation process, was compared with the results of calculated values, and a good coincidence between them was obtained. This coincidence confirms the existence of the Coulomb blockade phenomena in our SET even at room temperature.

引用

页码：92 / 94

页数：3

共 4 条

[1]

GRABERT H, 1992, SINGLE CHARGE TUNNEL, P80

[2]

Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode [J].

MATSUMOTO, K ;

TAKAHASHI, S ;

ISHII, M ;

HOSHI, M ;

KUROKAWA, A ;

ICHIMURA, S ;

ANDO, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1995, 34 (2B) :1387-1390

[3]

Matsumoto K, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P363, DOI 10.1109/IEDM.1995.499215

[4]

NANOFABRICATION OF TITANIUM SURFACE BY TIP-INDUCED ANODIZATION IN SCANNING TUNNELING MICROSCOPY [J].

SUGIMURA, H ;

UCHIDA, T ;

KITAMURA, N ;

MASUHARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1993, 32 (4A) :L553-L555

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