Realizing a stable magnetic double-well potential on an atom chip

被引：24

作者：

Estève, J ^{[1
]}

Schumm, T ^{[1
]}

Trebbia, JB ^{[1
]}

Bouchoule, I ^{[1
]}

Aspect, A ^{[1
]}

Westbrook, CI ^{[1
]}

机构：

[1] CNRS, UMR 8501, Inst Opt, Lab Charles Fabry, F-91403 Orsay, France

来源：

EUROPEAN PHYSICAL JOURNAL D | 2005年 / 35卷 / 01期

关键词：

D O I：

10.1140/epjd/e2005-00190-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We discuss design considerations and the realization of a magnetic double-well potential on ail atom chip using current-carrying wires. Stability requirements for the trapping potential lead to a typical size of order microns for such a device. We also present experiments using the device to manipulate cold, trapped atoms.

引用

页码：141 / 146

页数：6

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