Lateral N-channel inversion mode 4H-SiC MOSFET's

被引：34

作者：

Sridevan, S ^{[1
]}

Baliga, BJ ^{[1
]}

机构：

[1] N Carolina State Univ, Power Semicond Res Ctr, Raleigh, NC 27695 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1998年 / 19卷 / 07期

关键词：

inversion layer; mobility; MOSFET; silicon carbide;

D O I：

10.1109/55.701425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Advances in MOS devices on silicon carbide (SiC) have been greatly hampered by the low inversion layer mobilities. In this paper, the electrical characteristics of lateral n-channel MOSFET's fabricated on 4H-SiC are reported for the first time, Inversion layer electron mobilities of 165 cm(2)/V.s in 4H-SiC MOSFET's were measured at room temperature. These MOSFET's were fabricated using a low temperature deposited oxide, with subsequent oxidation anneal, as the gate dielectric.

引用

页码：228 / 230

页数：3

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