Silicon carbide MOSFET technology

The research and development activities carried out to demonstrate the status of MOS planar technology for the manufacture of high temperature SiC ICs will be described. These activities resulted in the design, fabrication and demonstration of the world's first SiC analog IC-a monolithic MOSFET operational amplifier. Research tasks required for the development of a planar SiC MOSFET IC technology included: characterization of the SiC-SiO2 interface using thermally grown oxides; high temperature (350 degrees C) reliability studies of thermally grown oxides; ion implantation studies of donor (N) and acceptor (B) dopants to form junction diodes; epitaxial layer characterization; device isolation methods; and finally integrated circuit design, fabrication and testing of the world's first monolithic SiC operational amplifier IC. High temperature circuit drift instabilities at 350 degrees C were characterized. These studies defined an SiC depletion model MOSFET IC technology and outlined tasks required to improve all types of SiC devices. Copyright (C) 1996 Elsevier Science Ltd