Nanometer patterning of epitaxial CoSi2/Si(100) for ultrashort channel Schottky barrier metal-oxide-semiconductor field effect transistors

被引：44

作者：

Zhao, QT ^{[1
]}

Klinkhammer, F ^{[1
]}

Dolle, M ^{[1
]}

Kappius, L ^{[1
]}

Mantl, S ^{[1
]}

机构：

[1] Forschungszentrum Julich, Inst Schicht & Ionentech, D-52425 Julich, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 03期

关键词：

D O I：

10.1063/1.123059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A nanometer patterning method, based on local oxidation of silicide layers, was used to pattern epitaxial CoSi2 layers. A feature size as small as 50 nm was obtained for 20 nm epitaxial CoSi2 layers on Si(100) after patterning by local rapid thermal oxidation in dry oxygen. A Schottky source/drain metal-oxide-semiconductor field effect transistor with epitaxial CoSi2 on p-Si(100) was fabricated using this nanopatterning method to make the 100 nm gate. The device shows good I-V characteristics at 300 K. (C) 1999 American Institute of Physics. [S0003-6951(99)02503-6].

引用

页码：454 / 456

页数：3