Monitoring stress in thin films during processing

被引：64

作者：

Chason, E ^{[1
]}

Sheldon, BW ^{[1
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

来源：

SURFACE ENGINEERING | 2003年 / 19卷 / 05期

关键词：

D O I：

10.1179/026708403225010118

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Wafer curvature measurements are a simple yet sensitive way to measure stress in thin films. A inultibeam optical system designed for in situ monitoring makes it possible to monitor the evolution of thin film stress in real time in a variety of deposition and processing environments. Examples of stress measurements in epitaxial systems, polycrystalline films and hard coatings are discussed.

引用

页码：387 / 391

页数：5

共 33 条

[31] Measurements of stress during vapor deposition of copper and silver thin films and multilayers [J].