Room temperature InAs photodiode-InGaAs LED pairs for methane detection in the mid-IR

被引：44

作者：

Matveev, B ^{[1
]}

Aidaraliev, M ^{[1
]}

Gavrilov, G ^{[1
]}

Zotova, N ^{[1
]}

Karandashov, S ^{[1
]}

Sotnikova, C ^{[1
]}

Stus', N ^{[1
]}

Talalakin, G ^{[1
]}

Il'inskaya, N ^{[1
]}

Aleksandrov, S ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 1998年 / 51卷 / 1-3期

关键词：

infrared LEDs; infrared photodiodes; optical sensors;

D O I：

10.1016/S0925-4005(98)00200-7

中图分类号：

O65 [分析化学];

学科分类号：

070302 [分析化学]; 081704 [应用化学];

摘要：

InGaAs LEDs and InAs photodiodes with wide gap window were characterized at 0-80 degrees C with respect to methane detection at 3.3-3.4 mu m wavelengths. Signal-to-noise ratio as high as 4 x 10(3) and a limit of detection as low as 170 ppm have been estimated for a single LED pulse of I = 3 A, tau = 10 mu s at room temperature. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：233 / 237

页数：5

共 9 条

[1]

Long-wavelength uncooled sources of λ=5-6 μm radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy [J].