Long-wavelength uncooled sources of λ=5-6 μm radiation using graded-index InAsSb(P) layers grown by liquid-phase epitaxy

被引：3

作者：

Aidaraliev, M ^{[1
]}

Zotova, NV ^{[1
]}

Karandashev, SA ^{[1
]}

Matveev, BA ^{[1
]}

Remennyi, MA ^{[1
]}

Stus', NM ^{[1
]}

Talalakin, GN ^{[1
]}

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 03期

关键词：

Radiation; Radiation Source; Spectral Curve; Versus Structure; Spontaneous Radiation;

D O I：

10.1134/1.1262071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graded-index p-n InAsSb/InAsSbP/InAs structures capable of emitting at the maximum of the spectral curve up to 5.4 mu m with a half-width of similar to 26 meV (similar to 0.6 mu m) without cooling have been fabricated and studied. This is the longest-wavelength radiation obtained at room temperature in III-V structures grown by liquid-phase epitaxy and the band is the narrowest obtained for semiconductor spontaneous radiation sources. (C) 1998 American Institute of Physics. [S1063-7850(98)03403-X].

引用

页码：243 / 245

页数：3

共 8 条

[1]

Aidaraliev M., 1991, Soviet Technical Physics Letters, V17, P852

[2] UNCOOLED INSB/IN1-XALXSB MIDINFRARED EMITTER [J].