Advantages of RuOx bottom electrode in the dielectric and leakage characteristics of (Ba,Sr)Ti0(3) capacitor

被引：27

作者：

Kim, YT ^{[1
]}

Lee, CW ^{[1
]}

机构：

[1] KOOKMIN UNIV,DEPT PHYS,SONGBUK GU,SEOUL 136702,SOUTH KOREA

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 12A期

关键词：

RuOx; bottom electrode; interfacial reaction; oxygen deficiency; leakage current; (Ba; Sr)TiO3; capacitor;

D O I：

10.1143/JJAP.35.6153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystal structure and electrical properties of (Ba,Sr)TiO3 (BST) films were investigated with three different bottom electrodes, Ti/Pt, RuOx and RuOx/Pt. On the RuOx and RuOx/Pt electrodes BST films were preferentially grown along the same orientations of electrodes, whereas BST films have no preferential orientation on the Pt electrode. The interfacial reaction, oxygen deficiency and hillock formation in the BST capacitors were obviously prevented by the RuOx bottom electrode, resulting in a high dielectric constant (300-305) and low leakage current density (10(-9) A/cm(2)).

引用

页码：6153 / 6156

页数：4

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