Viscous flow and MOS properties of MgF2-B2O3-GeO2-SiO2 glasses with ionic bonds

被引：2

作者：

Kobayashi, K

机构：

[1] Toshiba ULSI Research Center, Kawasaki

来源：

JOURNAL OF APPLIED ELECTROCHEMISTRY | 1996年 / 26卷 / 05期

关键词：

D O I：

10.1007/BF01021981

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：551 / 553

页数：3

共 19 条

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