FLOW POINTS AND REFLOW IN ALKOXIDE GLASSES

被引：11

作者：

KOBAYASHI, K

机构：

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1993年 / 159卷 / 03期

关键词：

D O I：

10.1016/0022-3093(93)90234-O

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Temperatures for flow of arsenic-doped Si(OC2H5)4-B(OCH3)-P2O5 glass systems are less than those for undoped glasses. Possible mechanisms for this reduction in flow temperature are discussed in terms of glass defects and residual radicals. The planarization technique was applied to low-temperature (below 850-degrees-C) reflow glasses for dynamic random access memories. Planar reflow patterns, which flowed at 850-degrees-C for 1 h, were obtained.

引用

页码：274 / 276

页数：3

共 9 条

[1]

KERN W, 1982, RCA REV, V43, P423

[2] DTA AND MOS CHARACTERISTICS FOR PBO-B2O3-SIO2-GEO2 PASSIVATION GLASSES [J].