Diameter-dependent growth rate of InAs nanowires

被引:143
作者
Froberg, L. E. [1 ]
Seifert, W. [1 ]
Johansson, J. [1 ]
机构
[1] Lund Univ, Solid State Phys Nanometr Struct Consortium, S-22100 Lund, Sweden
来源
PHYSICAL REVIEW B | 2007年 / 76卷 / 15期
关键词
D O I
10.1103/PhysRevB.76.153401
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have grown Au seeded InAs nanowires using chemical beam epitaxy and report on the growth rate dependence on nanowire diameter. We find a maximum of the growth rate at a nanowire diameter of 25 nm, below which the growth rate decreases due to the Gibbs-Thomson effect. Above the maximum, the growth rate decreases with increasing diameter due to the effect of material diffusion to the growth point. A unified model, which accounts for both the Gibbs-Thomson effect and material diffusion, is presented and successfully compared to the experiments. From the comparison, we extract the diffusion length on the substrate surface and a critical diameter, below which nanowire growth ceases, and show that these physical parameters can be tuned by controlling the supersaturation.
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页数:4
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