Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides

被引:96
作者
Roldan, R. [1 ]
Lopez-Sancho, M. P. [1 ]
Guinea, F. [1 ]
Cappelluti, E. [2 ]
Silva-Guillen, J. A. [3 ,4 ]
Ordejon, P. [3 ,4 ]
机构
[1] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain
[2] CNR, Ist Sistemi Complessi, UOS Sapienza, I-00185 Rome, Italy
[3] ICN2, E-08193 Bellaterra, Spain
[4] CSIC, E-08193 Bellaterra, Spain
来源
2D MATERIALS | 2014年 / 1卷 / 03期
关键词
transition metal dichalcogenides; spin-orbit interaction; electronic band structure; VALLEY POLARIZATION; MONOLAYER MOS2; DISULFIDE; HELICITY;
D O I
10.1088/2053-1583/1/3/034003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMDs) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. Here we present a detailed study of the effect of spin-orbit coupling (SOC) on the band structure of single-layer and bulk TMDs, including explicitly the role of the chalcogen orbitals and their hybridization with the transition metal atoms. To this aim, we combine density functional theory (DFT) calculations with a Slater-Koster tight-binding (TB) model. Whereas most of the previous TB models have been restricted to the K and K' points of the Brillouin zone (BZ), here we consider the effect of SOC in the whole BZ, and the results are compared to the band structure obtained by DFT methods. The TB model is used to analyze the effect of SOC in the band structure, considering separately the contributions from the transition metal and the chalcogen atoms. Finally, we present a scenario where, in the case of strong SOC, the spin/orbital/valley entanglement at the minimum of the conduction band at Q can be probed and be of experimental interest in the most common cases of electron-doping reported for this family of compounds.
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页数:21
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