Local Strain Engineering in Atomically Thin MoS2

被引：1121

作者：

Castellanos-Gomez, Andres ^{[1
]}

Roldan, Rafael ^{[2
]}

Cappelluti, Emmanuele ^{[2
,3
]}

Buscema, Michele ^{[1
]}

Guinea, Francisco ^{[2
]}

van der Zant, Herre S. J. ^{[1
]}

Steele, Gary A. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, Spain

[3] UOS Sapienza, CNR, ISC, I-00185 Rome, Italy

来源：

NANO LETTERS | 2013年 / 13卷 / 11期

基金：

欧洲研究理事会;

关键词：

Molybdenum disulfide nanosheets; atomically thin crystal; strain engineering; exciton trapping; funnel effect; band structure; VALLEY POLARIZATION; ELASTIC PROPERTIES; MONOLAYER; BILAYER; ENERGY; PHOTOLUMINESCENCE; GRAPHENE; FIELD;

D O I：

10.1021/nl402875m

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Controlling the bandstructure through local-strain engineering is an exciting avenue for tailoring optoelectronic properties of materials at the nanoscale. Atomically thin materials are particularly well-suited for this purpose because they can withstand extreme nonhomogeneous deformations before rupture. Here, we study the effect of large localized strain in the electronic bandstructure of atomically thin MoS2. Using photoluminescence imaging, we observe a strain-induced reduction of the direct bandgap and funneling of photogenerated excitons toward regions of higher strain. To understand these results, we develop a nonuniform tight-binding model to calculate the electronic properties of MoS2 nanolayers with complex and realistic local strain geometries, finding good agreement with our experimental results.

引用

页码：5361 / 5366

页数：6

共 49 条

[1] Controlling a Nanowire Quantum Dot Band Gap Using a Straining Dielectric Envelope [J].