High frequency characteristics of InAs/GaInAs quantum dot distributed feedback lasers emitting at 1.3μm

被引：32

作者：

Krebs, R ^{[1
]}

Klopf, F ^{[1
]}

Rennon, S ^{[1
]}

Reithmaier, JP ^{[1
]}

Forchel, A ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

ELECTRONICS LETTERS | 2001年 / 37卷 / 20期

关键词：

D O I：

10.1049/el:20010841

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The high frequency properties of InAs/GaInAs quantum dot distributed feedback (DFB) lasers emitting at 1.3 mum have been examined. The lasers display a small static linewidth of 1.3 MHZ and a chirp as low as 83 MHz/mA. More than 5 GHz small-signal modulation bandwidth was observed in first devices indicating the potential for high-speed operation of quantum dot lasers.

引用

页码：1223 / 1225

页数：3

共 7 条

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