Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices

被引:77
作者
Saarenpaa, Hanna [1 ]
Niemi, Tapio [2 ]
Tukiainen, Antti [2 ]
Lemmetyinen, Helge [1 ]
Tkachenko, Nikolai [1 ]
机构
[1] Tampere Univ Technol, Dept Chem & Bioengn, FIN-33101 Tampere, Finland
[2] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
关键词
Aluminum doped zinc oxide; Atomic layer deposition; Organic solar cells; THIN-FILMS; SOLAR-CELLS; ZNO; TEMPERATURE; EFFICIENCY; ANODE;
D O I
10.1016/j.solmat.2010.04.006
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Aluminum doped zinc oxide (AZO) films were studied as an alternative transparent electrode material to indium tin oxide (ITO) in organic photovoltaic devices. The AZO films were prepared by atomic layer deposition from diethylzinc, water and trimethylaluminum precursors. The same number of deposition cycles resulted in 170 and 90 nm thick films at deposition temperatures of 150 and 250 degrees C, respectively. Uniform films with wedge-shaped crystallites were observed at both temperatures. The functionality of the AZO electrodes in photovoltaic applications was tested using known organic photoactive layers. Devices with AZO electrode showed comparable performance to the reference device where ITO was used as transparent electrode. Moreover, the devices with AZO electrode were stable in open air showing no degradation during 40 days time interval. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:1379 / 1383
页数:5
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