Low pressure chemical vapour deposition of ZnO layers for thin-film solar cells: temperature-induced morphological changes

被引:266
作者
Fay, S [1 ]
Kroll, U [1 ]
Bucher, C [1 ]
Vallat-Sauvain, E [1 ]
Shah, A [1 ]
机构
[1] Inst Microtech, Thin Film Silicon & Photovalta Lab, CH-2000 Neuchatel, Switzerland
关键词
Tco; LP-CVD; zinc oxide; growth; thin-film solar cells;
D O I
10.1016/j.solmat.2004.08.002
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Zinc oxide (ZnO) is now often used as a transparent conductive oxide for contacts in thin-film silicon solar cells. This paper presents a study of ZnO material deposited by the low-pressure chemical vapour deposition technique, in a pressure range below the pressures usually applied for the deposition of this kind of material. A temperature series has been deposited, showing a morphological transition around 150degreesC. ZnO samples deposited with temperatures just higher than this transition are constituted of large grains highly oriented along a single crystallographic orientation. These "monocrystals" lead to low resistivity values, showing a clear correlation between the size of the surface grains and the electrical performance of corresponding films. Additionally, these large grains also yield ZnO layers with high transparency and high light-scattering power, specially suitable for solar cell technology based on thin-film silicon. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:385 / 397
页数:13
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