Damage production and annealing of ion implanted silicon carbide

被引：45

作者：

Heft, A ^{[1
]}

Wendler, E ^{[1
]}

Heindl, J ^{[1
]}

Bachmann, T ^{[1
]}

Glaser, E ^{[1
]}

Strunk, HP ^{[1
]}

Wesch, W ^{[1
]}

机构：

[1] UNIV ERLANGEN NURNBERG,INST WERKSTOFFWISSEN MIKROCHARAKTERISIERUNG,D-91058 ERLANGEN,GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1996年 / 113卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(95)01304-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Samples of 6H-SiC were implanted with Ga+ and Sb+ ions in a wide dose range (10(13) to 10(16) cm(-2)) at various target temperatures (-190 degrees C to 1200 degrees C). Short-time annealing was performed at temperatures from 600 degrees C to 1750 degrees C. The as-implanted and annealed samples were analyzed by means of the RBS-channeling technique, XTEM and optical measurements. The results show that amorphization can be prevented for implantation temperatures greater than or equal to 300 degrees C; from 500 degrees C to 800 degrees C minimum damage concentrations are obtained. Annealing of amorphous layers is quite difficult and non-perfect, no monocrystalline state was found up to temperatures of 1720 degrees C. Weakly damaged layers produced by a low dose (< 1 X 10(14) cm(-2)) at room temperature regrow perfectly at 1200 degrees C. Residual damage after high-dose implantation (greater than or equal to 1 X 10(15) cm(-2)) at elevated temperatures cannot be removed completely by annealing.

引用

页码：239 / 243

页数：5