Fabrication of InAs quantum dots on silicon

被引：12

作者：

Cirlin, GE ^{[1
]}

Petrov, VN

Dubrovskii, VG

Masalov, SA

Golubok, AO

Komyak, NI

Ledentsov, NN

Alferov, ZI

Bimberg, D

机构：

[1] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 198103, Russia

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

[3] Tech Univ Berlin, D-1000 Berlin, Germany

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 04期

关键词：

Silicon; Microscopy; Reflection; Surface Morphology; Electron Diffraction;

D O I：

10.1134/1.1262087

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection high-energy electron diffraction and scanning tunneling microscopy have been used to demonstrate for the first time that InAs quantum dots may be fabricated directly on Si(100) by molecular beam epitaxy. It is shown that heteroepitaxial growth in an InAs/Si system takes place by the Stranski-Krastanow mechanism and the surface morphology depends strongly on the substrate temperature. (C) 1998 American Institute of Physics. [S1063-7850(98)01704-2]

引用

页码：290 / 292

页数：3

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