Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method

被引：117

作者：

Nomura, M ^{[1
]}

Ono, K ^{[1
]}

Gopalakrishnan, S ^{[1
]}

Sugawara, T ^{[1
]}

Nakao, SI ^{[1
]}

机构：

[1] Univ Tokyo, Fac Engn, Dept Chem Syst Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

JOURNAL OF MEMBRANE SCIENCE | 2005年 / 251卷 / 1-2期

关键词：

hydrogen; silica membrane; counter diffusion CVD; steam stability; tetramethyl orthosilicate;

D O I：

10.1016/j.memsci.2004.11.008

中图分类号：

TQ [化学工业];

学科分类号：

0817 ;

摘要：

A stable silica membrane having excellent H-2/N-2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O-2 as reactants at 873 K. TMOS and O-2 were provided in the opposing geometry of the Substrates. and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H-2 was ca. 20 kJ mol(-1) through the membrane. H-2 permeance at 873 K permeation test was 1.5 X 10(-7) mol m(-2) s(-1) Pa-1. H-2/N-2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K). (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：151 / 158

页数：8

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