Observations of partial dislocations and basal twin boundaries in shock-wave-deformed sapphire

被引：13

作者：

Chen, SJ ^{[1
]}

Howitt, DG ^{[1
]}

机构：

[1] Univ Calif Davis, Dept Chem Engn & Mat Sci, Livermore, CA 95616 USA

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1998年 / 78卷 / 03期

关键词：

D O I：

10.1080/01418619808241935

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Basal twins and 1/3[10 (1) over bar 0] partial dislocations are two of the most commonly observed microstructures in shock-wave-deformed sapphire. The relationship between them, established by transmission electron microscopy, is that the partial dislocations are the twinning dislocation for basal twins. In the light of this observation: the existing dislocation theories for the basal twinning are discussed.

引用

页码：765 / 776

页数：12

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