DC field dependent properties of Na0.5K0.5NbO3/SiO2/Si structures at millimeter-wave frequencies

被引：28

作者：

Abadei, S ^{[1
]}

Gevorgian, S

Cho, CR

Grishin, A

Andreasson, J

Lindbäck, T

机构：

[1] Chalmers Univ Technol, Dept Microelect, S-41296 Gothenburg, Sweden

[2] Ericsson Microwave Syst, Core Unit Res Ctr, S-43184 Molndal, Sweden

[3] Royal Inst Technol, Dept Condensed Matter Phys, S-10044 Stockholm, Sweden

[4] Lulea Univ Technol, Dept Mat & Mfg Engn, S-95187 Lulea, Sweden

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 13期

关键词：

D O I：

10.1063/1.1353838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dielectric properties of laser-ablated 0.5-mum-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Omega cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-mum-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 mum. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices. (C) 2001 American Institute of Physics.

引用

页码：1900 / 1902

页数：3

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