Frequency dependence of the reverse-biased capacitance of blue and green light-emitting diodes

被引：26

作者：

Zohta, Y

Kuroda, H

Nii, R

Nakamura, S

机构：

[1] Tokyo Engn Univ, Hachioji, Tokyo 192, Japan

[2] Nichia Chem Ind Inc, Tokushima 774, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 189卷

关键词：

frequency dependence; diode capacitance; diode conductance; GaN; blue LED; green LED;

D O I：

10.1016/S0022-0248(98)00301-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

It is found that the capacitance and conductance vs. voltage characteristics of reverse-biased blue and green light-emitting diodes are strongly frequency-dependent. A plausible explanation of this phenomenon is proposed that the: shallow acceptor density in the lightly doped p-side is so high that the shallow accepters are not fully ionized near room temperature. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：816 / 819

页数：4

共 4 条

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[2]

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