SUPERBRIGHT GREEN INGAN SINGLE-QUANTUM-WELL-STRUCTURE LIGHT-EMITTING-DIODES

被引：877

作者：

NAKAMURA, S ^{[1
]}

SENOH, M ^{[1
]}

IWASA, N ^{[1
]}

NAGAHAMA, S ^{[1
]}

YAMADA, T ^{[1
]}

MUKAI, T ^{[1
]}

机构：

[1] NICHIA CHEM IND LTD, DEPT ENGN, TOKUSHIMA 774, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 10B期

关键词：

INGAN; ALGAN; QUANTUM WELL STRUCTURE; MOCVD; BLUE LED; GREEN LED;

D O I：

10.1143/JJAP.34.L1332

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superbright green InGaN single quantum well (SQW) structure light-emitting diodes (LEDs) with a luminous intensity of 12 cd were fabricated. The luminous intensity of these green InGaN SQW LEDs (12 cd) was about 100 times higher than that of conventional green GaP LEDs (0.1 cd). The output power, the external quantum efficiency, the peak wavelength and the full, width at half-maximum of green SQW LEDs were 3 mW, 6.3%, 520 nm and 30 nm, respectively, at a forward current of 20 mA. The p-AlGaN/InGaN/n-GaN structure of green InGaN SQW LEDs were grown by metalorganic chemical vapor deposition on sapphire subsutrates.

引用

页码：L1332 / L1335

页数：4

共 16 条

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