Piezoelectric characterization and thermal stability of a high-performance α-quartz-type material, gallium arsenate -: art. no. 074110

被引:33
作者
Cambon, O
Haines, J
Fraysse, G
Détaint, J
Capelle, B
Van der Lee, A
机构
[1] Univ Montpellier 2, Lab Physicochim Mat Condensee, CNRS, UMR 5617, F-34095 Montpellier, France
[2] Univ Paris 06, Lab Mineral & Cristallog Paris, F-75252 Paris, France
[3] Univ Montpellier 2, Inst Europeen Membranes Montpellier, CNRS, UMR 5635, F-34095 Montpellier, France
关键词
D O I
10.1063/1.1874293
中图分类号
O59 [应用物理学];
学科分类号
摘要
Piezoelectric measurements were performed on large single crystals (8 mm along the c direction) of an alpha-quartz-type piezoelectric material, gallium arsenate, GaAsO4, which allow us to extend the structure-property relationships in the alpha-quartz-type materials. These first measurements on Y-rotated-cut plates have shown that gallium arsenate is the highest-performance piezoelectric material of this group. As compared to the coupling coefficients of the other materials with the same structure (k(SiO2)=8%, k(AlPO4)=11%, and k(GaPO4)=16%), gallium arsenate exhibits the highest piezoelectric coupling coefficient of about 22%, as has been predicted by the structure-property relationships. Moreover, from these piezoelectric measurements, the C-66(') elastic constant was determined and compared with elastic constants in quartz-type materials. The proposed value for the cut angle of the AT plane in GaAsO4 is -6.3 degrees. In order to extend the previous thermal stability results, thermal gravimetric analysis (TGA) and x-ray diffraction have been carried out on GaAsO4 powder at high temperatures. It has been shown that GaAsO4 is stable up to 1030 degrees C. The thermal-expansion coefficient of GaAsO4 is 4.0x10(-5) K-1. The thermal expansion of the predicted AT plane (Y-6.3 degrees) in GaAsO4 is shown to be similar to that of the other materials. Finally, it is demonstrated that the intertetrahedral bridging angle theta (A-O-B) of GaAsO4 is the most stable in alpha-quartz materials, which enables one to predict that GaAsO4 should retain high piezoelectric performances up to 925 degrees C. (C) 2005 American Institute of Physics.
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