Transient terahertz reflection spectroscopy of undoped InSb from 0.1 to 1.1 THz

被引：127

作者：

Howells, SC ^{[1
]}

Schlie, LA ^{[1
]}

机构：

[1] UNIV NEW MEXICO,DEPT PHYS,ALBUQUERQUE,NM 87131

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.117783

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using transient terahertz reflection spectroscopy, the far-infrared (0.1-1.1 THz) reflection amplitude and associated phase change upon reflection from undoped InSb was measured between 80 and 160 K. Using the Drude model, the transient terahertz data were fit by adjusting the values for the electron mobility and carrier concentration, The close agreement between the data and model validates using the Drude model to describe the electronic and optical properties of InSb below 1 THz. These results suggest a possible application of transient terahertz reflection spectroscopy for measuring semiconductor properties of thick samples without surface contact. (C) 1996 American Institute of Physics.

引用

页码：550 / 552

页数：3

共 12 条

[1]

[Anonymous], 1991, SEMICONDUCTORS+, DOI DOI 10.1007/978-3-642-45681-7

[2]

Ashcroft N.W., 1976, Solid state physics Holt, Rinehart and Winston, Vfirst

[3] DISTORTION OF ULTRASHORT PULSES ON TOTAL INTERNAL-REFLECTION [J].