Structure, properties and applications of phenyl-modified silicate films

被引：17

作者：

Vorotilov, KA ^{[1
]}

Vasiljev, VA ^{[1
]}

Sobolevsky, MV ^{[1
]}

Afanasyeva, NI ^{[1
]}

机构：

[1] RUSSIAN ACAD SCI,INST SPECT,TROITSK 142092,RUSSIA

来源：

THIN SOLID FILMS | 1996年 / 288卷 / 1-2期

关键词：

electrical properties and measurements; metallization; optical properties; planarization; structural properties;

D O I：

10.1016/S0040-6090(96)08863-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Organically modified silicate films prepared by sol-gel techniques have been studied. The silicate structure has been modified by phenyl radicals. The films were prepared by cohydrolysis in various proportions of tetraethyloxysilane and phenyl triethoxysilane or diphenyl diethylhexyloxy diethoxydisiloxane. It is shown that phenyl radicals introduced into the silicate network reduce cross-linking in polymer structure, their density and hydroxyl contents. These provide low shrinkage, high cracking resistance, and low dielectric constant and loss tangent of phenyl-modified silicate films. Some questions of applications of such films in the process of planarization of multilevel interconnections are briefly discussed as well.

引用

页码：57 / 63

页数：7

共 15 条

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