DIELECTRIC AND INTERFACE-STATE MEASUREMENTS OF METAL-SPIN-ON-OXIDE-SILICON CAPACITORS

被引：11

作者：

LAM, YW ^{[1
]}

LAM, HC ^{[1
]}

机构：

[1] CHINESE UNIV HONG KONG, CTR SCI, DEPT ELECTR, SHATIN, HONG KONG

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1976年 / 9卷 / 10期

关键词：

D O I：

10.1088/0022-3727/9/10/013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1477 / 1487

页数：11

共 11 条

[1]

ATALLA MM, 1959, SUPPL PFROC I ELEC B, V106, P1130

[2] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[3] SURFACE STATES AND INSULATOR TRAPS AT SI3N4-GAAS INTERFACE [J].

COOPER, JA ;

SCHWARTZ, RJ ;

WARD, ER .

SOLID-STATE ELECTRONICS, 1972, 15 (11) :1219-+

[4] EFFECTS OF OXIDE TRAPS ON MOS CAPACITANCE [J].

HEIMAN, FP ;

WARFIELD, G .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (04) :167-&

[5] MECHANISM OF SELF-HEALING ELECTRICAL BREAKDOWN IN MOS STRUCTURES [J].

KLEIN, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (11) :788-+

[6] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[7]

LAM HC, TO BE PUBLISHED

[8] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[9] LATERAL AC CURRENT FLOW MODEL FOR METAL-INSULATOR-SEMICONDUCTOR CAPACITORS [J].

NICOLLIAN, EH ;

GOETZBERGER, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (03) :108-+

[10] CHARGES ON OXIDIZED SILICON SURFACES [J].

SHOCKLEY, W ;

QUEISSER, HJ ;

HOOPER, WW .

PHYSICAL REVIEW LETTERS, 1963, 11 (11) :489-&

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