Quantum dots in carbon nanotubes

被引:28
作者
Ishibashi, K [1 ]
Ida, T
Suzuki, M
Tsukagoshi, K
Aoyagi, Y
机构
[1] RIKEN, Inst Phys & Chem Res, Semicond Lab, Wako, Saitama 3510198, Japan
[2] Japan Sci & Technol, CREST Project, Kawaguchi, Saitama 3320012, Japan
[3] Toyo Univ, Dept Elect & Elect, Kawagoe, Saitama 3508585, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2000年 / 39卷 / 12B期
关键词
carbon nanotube; SWNT; quantum dot; Coulomb blockade; zero dimensional level; microwave irradiation;
D O I
10.1143/JJAP.39.7053
中图分类号
O59 [应用物理学];
学科分类号
摘要
A technology to fabricate electrical contacts on individual single-wall carbon nanotubes has been developed, and electrical measurements are carried out below 4.2 Kelvin. The electrical transport property at low temperatures has basically been characterized as a quantum dot with a pronounced Coulomb blockade effect and zero dimensional confined levels. A microwave response to the nanotube quantum dot is also studied to further characterize the quantum dot. It is discussed how and where the tunnel barrier is formed to realize the quantum dot in a sample. The microwave irradiation effect on the quantum dot turns out to be a classical modulation of the source drain voltage, and is discussed considering the various energy and time scales associated with the transport.
引用
收藏
页码:7053 / 7057
页数:5
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