Comparison of defect density measurements in magnetic tunnel junctions

被引：6

作者：

Allen, D ^{[1
]}

Schad, R

Zangari, G

Zana, I

Tondra, M

Wang, D

Reed, D

机构：

[1] Univ Alabama, Dept Phys, Tuscaloosa, AL 35487 USA

[2] Univ Alabama, Ctr Mat Informat Technol, Tuscaloosa, AL 35487 USA

[3] Univ Alabama, Dept Met & Mat Engn, Tuscaloosa, AL 35487 USA

[4] Nonvolatile Elect, Eden Prairie, MN 55344 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2001年 / 89卷 / 11期

关键词：

D O I：

10.1063/1.1356711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic tunnel junctions may experience failure due to local shortcuts in the insulating layers of such devices. The quality of the insulating layers of these devices must be analyzed. We use electrodeposition to decorate pinholes and analyze the density of pinholes and pinhole precursors. Electrical breakdown measurements can also be performed on magnetic tunnel junctions to predict the probability of such devices failing. We discuss both experimental methods and compare the results obtained. It is observed that the two methods yield the same results for the areal defect density. (C) 2001 American Institute of Physics.

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页码：6662 / 6664

页数：3

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