Characterization of metal-doped TiO2 films by RBS/channeling

被引：12

作者：

Yamamoto, S

Yamaki, T

Naramoto, H

Tanaka, S

机构：

[1] JAERI Takasaki, Dept Mat Dev, Gunma 3701292, Japan

[2] JAERI Takasaki, Adv Sci Res Ctr, Gunma 3701292, Japan

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2003年 / 206卷

关键词：

X-ray diffraction; laser epitaxy; titanium compounds;

D O I：

10.1016/S0168-583X(03)00742-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Epitaxial anatase and rutile TiO2 films doped with Cr, Nb, Ta and W are successfully prepared by pulsed laser deposition. Anatase TiO2(001) films are grown on SrTiO3(001) and LaAlO3(001) substrates. Rutile TiO2(100) films are also obtained on alpha-Al2O3(0001) substrates. The typical temperature of substrates during the deposition is 500 degreesC and the pressure of O-2 gas is 4.7 Pa. The crystal quality of films, crystallographic relationships, and the concentration of doped metals were assessed by X-ray diffraction and Rutherford backscattering spectroscopy with channeling. The high quality metal-doped epitaxial TiO2 films are obtainable through the post-deposition annealing at 800 degreesC in air for 5 h. The concentration of doped metals is in the range from 0.2 to 1.5 at.%. RBS/channeling analysis reveals that doped Cr, Nb, Ta and W atoms are incorporated into the substitutional lattice sites of the anatase and rutile TiO2. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

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页码：268 / 271

页数：4

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