High-energy metal ion implantation into titanium dioxide films

被引：14

作者：

Nakao, S ^{[1
]}

Nonami, T ^{[1
]}

Jin, P ^{[1
]}

Miyagawa, Y ^{[1
]}

Miyagawa, S ^{[1
]}

机构：

[1] Natl Ind Res Inst Nagoya, Kita Ku, Nagoya, Aichi 4628510, Japan

来源：

SURFACE & COATINGS TECHNOLOGY | 2000年 / 128卷

关键词：

titanium oxide film; sol-gel method; metal ion implantation; Rutherford backscattering spectrometry; optical absorption; X-ray diffraction;

D O I：

10.1016/S0257-8972(00)00594-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Titanium dioxide (TiO2) films prepared by a sol-gel method were irradiated with 0.5 MeV V, Ti and 1.8 MeV Au ions and subsequently annealed at approximately 480 degrees C. After the implantation and thermal annealing, the microstructure and the optical properties of the TiO2 films were studied by Rutherford backscattering spectrometry (RBS), optical absorption and glancing angle X-ray diffraction measurements. It was found that the distribution of the implanted metal was slightly changed after annealing. The absorption edge of the films also slightly shifted toward the longer wavelength side. The films were composed of anatase and rutile phases. The anatase phase was reduced by ion implantation. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：446 / 449

页数：4

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