Oxygen depth profiling in TiOx/SiO2 prepared by sol-gel method using 16O(α, α)16O resonant backscattering

In order to find the optimum conditions to obtain films with high photocatalytic property by sol-gel method, depth profiling of oxygen in TiOx film deposited on SiO2 was carried out using resonant backscattering of 3.045 MeV He ions by the nuclear reaction of O-16(alpha, alpha)O-16. Depth profiling of hydrogen in the TiOx film was also conducted using elastic recoil detection analysis (ERDA). For the depth profiling by the resonant backscattering analysis, it is necessary to change the incident energy of He ions from about 3.03 to 3.1 MeV in steps of less than 10 keV, In our analyzing system, the ion beam energy of He++ was scanned by changing a bias voltage supplied to the target holder up to +30 kV without changing the accelerator terminal voltage. The effect of the bias voltage supplied on the sample holder on the energy and the yield of the oxygen peak relative to the titanium and the silicon signal were investigated. The automatic analysis system and the analyzed results are presented. (C) 1998 Elsevier Science B.V.