High-lifetime GaAs on Si using GeSi buffers and its potential for space photovoltaics

被引：36

作者：

Carlin, JA

Ringel, SA ^{[1
]}

Fitzgerald, A

Bulsara, M

机构：

[1] Ohio State Univ, Dept Elect Engn, Columbus, OH 43210 USA

[2] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[3] Amberwave Syst Corp, Woburn, MA 01801 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 66卷 / 1-4期

基金：

美国国家科学基金会; 美国国家航空航天局;

关键词：

III-V space solar cells; heteroepitaxy; latticemismatch; GaAs/Si; GeSi;

D O I：

10.1016/S0927-0248(00)00250-6

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Record-high minority carrier lifetimes exceeding 10 ns are reported for GaAs grown on Si wafers using compositionally graded GeSi buffers coupled with monolayer-scale control of the GaAs/Ge interface nucleation during molecular beam epitaxy. The GaAs layers are free of anti-phase domain disorder, with threading dislocation densities at or below 2 x 10(6) cm(-2) Secondary ion mass spectroscopy (SIMS) reveals that crossdiffusion of Ga, As and Ge at the GaAs/Ge interface formed on the graded buffers are below detection limits in the interface region. Test diodes yielded excellent I-V characteristics, matching those of GaAs diodes on Ge and GaAs wafers, indicating that to a first order, threading dislocations do not limit device performance. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：621 / 630

页数：10

共 13 条

[1] MINORITY-CARRIER LIFETIME OF GAAS ON SILICON [J].