MINORITY-CARRIER LIFETIME OF GAAS ON SILICON

被引：38

作者：

AHRENKIEL, RK ^{[1
]}

ALJASSIM, MM ^{[1
]}

KEYES, B ^{[1
]}

DUNLAVY, D ^{[1
]}

JONES, KM ^{[1
]}

VERNON, SM ^{[1
]}

DIXON, TM ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 03期

关键词：

D O I：

10.1149/1.2086595

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The lifetime of minority carriers in GaAs grown heteroepitaxially on silicon is reduced two to three orders of magnitude by recombination at mismatch dislocations. Here we fabricated isotype double heterostructures for minority carrier lifetime diagnostics and transmission electron microscopy (TEM). The diagnostic structures were fabricated on strain reduction layers composed of annealed buffer layers and strained layers. Transmission electron microscopy (TEM) shows that an annealed buffer layer reduces the dislocation density over two orders of magnitude. The minority carrier lifetime in these double heterostructures is increased more than a factor of twenty. The minority carrier lifetime vs. dislocation density was described quite well by the model of Yamaguchi and co-workers. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：996 / 1000

页数：5

共 18 条

[1] MINORITY-CARRIER LIFETIME IN ITO INP HETEROJUNCTIONS [J].