VERY LOW INTERFACE RECOMBINATION VELOCITY IN (AL,GA)AS HETEROSTRUCTURES GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：38

作者：

MOLENKAMP, LW

VANTBLIK, HFJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 08期

关键词：

D O I：

10.1063/1.341298

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4253 / 4256

页数：4

共 11 条

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[8] MINORITY-CARRIER LIFETIME AND LUMINESCENCE IN MOVPE-GROWN (AL,GA)AS EPILAYERS AND DH LASERS [J].

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