THE RADIATIVE RECOMBINATION COEFFICIENT OF GAAS FROM LASER DELAY MEASUREMENTS AND EFFECTIVE NONRADIATIVE CARRIER LIFETIMES

被引：34

作者：

THOOFT, GW

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 05期

关键词：

D O I：

10.1063/1.92747

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：389 / 390

页数：2

共 8 条

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[4] CURRENT DEPENDENCE OF SPONTANEOUS CARRIER LIFETIMES IN GAAS-GA1-CHIALCHI AS DOUBLE-HETEROSTRUCTURE LASERS [J].

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[5] MEASUREMENT OF SPONTANEOUS CARRIER LIFETIME FROM STIMULATED EMISSION DELAYS IN SEMICONDUCTOR LASERS [J].

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[6]

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[7] LPE GROWTH OF DH LASER STRUCTURES WITH THE DOUBLE SOURCE METHOD [J].

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VONOPDORP C, UNPUBLISHED

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